W25NM60N

STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum temperature allowed te c■ 100% avalanche tested le du■ Low input capacitance and gate charge so ro■ Low gate input resistance - Ob te PApplication ) le■ Switching applications ct(s bsoDescription du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology. This P t(srevolutionary MOSFET associates a new vertical te cstructure to the company’s strip layout to yield one le uof the world’s lowest on-resistance and gate dcharge. It is therefore suitable for the most so rodemanding high efficiency converters 3 2 1 TO-220FP 3 1 D²PAK 123 I²PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Ob lete PTable 1. Device summary soOrder codes Marking Ob STB25NM60N B25NM60N Package D²PAK Packaging Tape and reel STB25NM60N-1 B25NM60N I²PAK Tube STF25NM60N F25NM60N TO-220FP Tube STP25NM60N P25NM60N TO-220 Tube STW25NM60N W25NM60N TO-247 Tube June 2008 Rev 12 1/18 www.st.com 18 Contents Contents STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . ...