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FEP16JT Dataheets PDF



Part Number FEP16JT
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers
Datasheet FEP16JT DatasheetFEP16JT Datasheet (PDF)

FEP16DT thru FEP16JT ® FEP16DT/FEP16GT/FEP16JT Pb Free Plating Product Pb 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems TO-220AB 9.90±0.20 φ3.60±0.20 4.

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FEP16DT thru FEP16JT ® FEP16DT/FEP16GT/FEP16JT Pb Free Plating Product Pb 16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers Features Latest GPP technology with super fast recovery time Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,Motor Control and UPS Car Audio Amplifiers and Sound Device Systems TO-220AB 9.90±0.20 φ3.60±0.20 4.50±0.20 Unit:mm 1.30±0.20 6.50±0.20 15.70±0.20 2.80±0.20 9.19±0.20 1.27±0.20 1.52±0.20 2.40±0.20 3.02±0.20 13.08±0.20 Mechanical Data Case: Heatsink TO-220AB/TO-220CE Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately 2.54typ 2.54typ 0.80±0.20 0.50±0.20 Case Case Case Case Positive Negative Doubler Series Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "G" Suffix "GA" Suffix "GD" Suffix "GS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL FEP16DT FEP16GT FEP16JT UNIT Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100oC VRRM VRMS VDC IF(AV) 200 140 200 400 280 400 16.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 175 150 Maximum Instantaneous Forward Voltage @ 8.0 A VF Maximum DC Reverse Current @TJ=25oC At Rated DC Blocking Voltage @TJ=125oC IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Typical Thermal Resistance (Note 3) R JC Operating Junction and Storage Temperature Range TJ, TSTG 0.98 1.3 5.0 100 35 90 2.2 -55 to + 150 NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. 600 420 600 1.7 V V V A A V uA uA nS pF oC/W oC Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ FEP16DT thru FEP16JT ® AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 13 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 CASE TEMPERATURE, oC 150 FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 80 FEP16DT FEP16GT 8 FEP16JT 0.1 0.01 TJ=25oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 175 150 125 100 75 50 25 0 1 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 TJ=125oC 100 10 TJ=25oC 1 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25oC f = 1.0 MHZ Vsig = 50mVp-p 100 JUNCTION CAPACITANCE, pF 10 0.1 1.0 4.0 10 REVERSE VOLTAGE, VOLTS 100 Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com.tw/ .


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