NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose
Description:
The NTE2349 (NP...
NTE2349 (
NPN) & NTE2350 (
PNP) Silicon Darlington
Transistors High Current, General Purpose
Description:
The NTE2349 (
NPN) and NTE2350 (
PNP) are silicon complementary Darlington
transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated IC D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
D Junction Temperature to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . ...