Complementary Transistors. NTE2358 Datasheet

NTE2358 Transistors. Datasheet pdf. Equivalent

Part NTE2358
Description Silicon Complementary Transistors
Feature NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 22k Bias Resist.
Manufacture NTE
Datasheet
Download NTE2358 Datasheet

NTE2357 (NPN) & NTE2358 (PNP) Silicon Complementary Transist NTE2358 Datasheet
Recommendation Recommendation Datasheet NTE2358 Datasheet





NTE2358
NTE2357 (NPN) & NTE2358 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 22k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 22k, R2 = 22k)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Band–width Product
NTE2357
ICBO
ICEO
IEBO
hFE
fT
VCB = 40V, IE = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 5mA
VCE = 10V, IC = 5mA
NTE2358
Output Capacitance
NTE2357
Cob VCB = 10V, f = 1MHz
NTE2358
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
70 113 150 µA
50 –
– 250 – MHz
– 200 – MHz
– 3.7 – pF
– 5.5 – pF



NTE2358
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
CollectorEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
Input OFF Voltage
Input ON Voltage
Input Resistance
VCE(sat) IC = 10mA, IB = 0.5mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 100µA, RBE =
VI(off) VCE = 5V, IC = 100µA
VI(on) VCE = 200mV, IC = 5mA
R1
0.1 0.3 V
50 – – V
50 – – V
0.8 1.1 1.5 V
1.0 1.9 3.0 V
15 22 29 k
Input Resistance Ratio
R1/R2
0.9 1.0 1.1
Collector
(Output)
Schematic Diagram
Collector
(Output)
Base
(Input)
R1
R2
Base
(Input)
R1
R2
Emitter
(GND)
NPN
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
Emitter
(GND)
PNP
ECB
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max





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