Document
NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits.
Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product
ICBO IEBO hFE
fT
VCB = 40Vdc, IE = 0
VBE = 4Vdc
VCE = 5V, IC = 10mA
VCE = 10V, IC = 50mA
NTE2361 NTE2362
Min Typ Max Unit – – 0.1 µA – – 0.1 µA
200 – 400 – 200 – MHz – 300 – MHz
Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
Cob VCB = 10Vdc, f = 1MHz
NTE2361 – 5.6 – pF NTE2362 – 3.7 – pF
Collector–Emitter Saturation Voltage
VCE(sat) IC = 100mA, IB = 10mA
NTE2361 – 0.15 0.4 NTE2362 – 0.1 0.3
V V
Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Rise Time Storage Time
Fall Time
VBE(sat) IC = 100mA, IB = 10mA
– 0.8 1.2
V(BR)CBO IC = 10µA, IE = 0
60 – –
V(BR)CEO IC = 100µA, RBE = ∞
50 – –
V(BR)EBO IE = 10µA, IC = ∞
5––
ton VCC = 20V,
tstg
IC = 100mA, IB1 = 10mA,
tf IB2 = 100mA
– 70 – – 400 – NTE2361 – 50 –
V V V V ns ns ns
NTE2362 – 70 – ns
Note 1. For PNP device (NTE2362), voltage and current values are negative. Note 2. Conditions apply to both except where noted.
.165 (4.2) Max
.126 (3.2) Max
.071 (1.8)
.500 (12.7) Max
ECB
.050 (1.27) .050 (1.27)
.035 (0.9)
.102 (2.6) Max
.