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NTE2362 Dataheets PDF



Part Number NTE2362
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE2362 DatasheetNTE2362 Datasheet (PDF)

NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Coll.

  NTE2362   NTE2362



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NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. For PNP device (NTE2362), voltage and current values are negative. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product ICBO IEBO hFE fT VCB = 40Vdc, IE = 0 VBE = 4Vdc VCE = 5V, IC = 10mA VCE = 10V, IC = 50mA NTE2361 NTE2362 Min Typ Max Unit – – 0.1 µA – – 0.1 µA 200 – 400 – 200 – MHz – 300 – MHz Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance Cob VCB = 10Vdc, f = 1MHz NTE2361 – 5.6 – pF NTE2362 – 3.7 – pF Collector–Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA NTE2361 – 0.15 0.4 NTE2362 – 0.1 0.3 V V Base–Emitter Saturation Voltage Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Rise Time Storage Time Fall Time VBE(sat) IC = 100mA, IB = 10mA – 0.8 1.2 V(BR)CBO IC = 10µA, IE = 0 60 – – V(BR)CEO IC = 100µA, RBE = ∞ 50 – – V(BR)EBO IE = 10µA, IC = ∞ 5–– ton VCC = 20V, tstg IC = 100mA, IB1 = 10mA, tf IB2 = 100mA – 70 – – 400 – NTE2361 – 50 – V V V V ns ns ns NTE2362 – 70 – ns Note 1. For PNP device (NTE2362), voltage and current values are negative. Note 2. Conditions apply to both except where noted. .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max ECB .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max .


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