Complementary Transistors. NTE240 Datasheet

NTE240 Transistors. Datasheet pdf. Equivalent

Part NTE240
Description Silicon Complementary Transistors
Feature NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Descript.
Manufacture NTE
Datasheet
Download NTE240 Datasheet

NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistor NTE240 Datasheet
NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends De NTE2401 Datasheet
NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transist NTE2402 Datasheet
NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transist NTE2403 Datasheet
NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transist NTE2404 Datasheet
NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transist NTE2405 Datasheet
NTE2406 Silicon NPN Transistor General Purpose Amp, Surface NTE2406 Datasheet
NTE2407 Silicon PNP Transistor General Purpose Amp, Surface NTE2407 Datasheet
NTE2408 Silicon NPN Transistor General Purpose Amp, Surface NTE2408 Datasheet
NTE2409 Silicon PNP Transistor General Purpose Amp, Surface NTE2409 Datasheet
Recommendation Recommendation Datasheet NTE240 Datasheet





NTE240
NTE191 (NPN) & NTE240 (PNP)
Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type
package designed for high–voltage video and luminance output stages in TV receivers.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA
D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO
NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction–to–Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1. NTE191 is a discontinued device and no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE191
NTE240
V(BR)CEO IC = 1mA, IB = 0, Note 3
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO
IE = 100µA, IC = 0
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
300 –
300 –
6–
5–
V
V
V
V



NTE240
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics (Cont’d)
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
ICBO
IEBO
VCB = 200V, IE = 0
VBE = 6V, IC = 0
– – 0.2
– – 0.1
DC Current Gain (NTE191 & NTE240)
NTE191
NTE240
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
NTE191
NTE240
hFE
VCE(sat)
VBE(on)
IC = 1mA, VCE = 10V, Note 3
IC = 10mA, VCE = 10V, Note 3
IC = 30mA, VCE = 10V, Note 3
IC = 10mA, VCE = 10V, Note 3
IC = 30mA, VCE = 10V, Note 3
IC = 30mA, IB = 3mA
IC = 30mA, VCE = 10V
25 – –
40 – –
40 – –
30 – –
30 – –
– – 0.75
– – 0.85
– – 0.90
Dynamic Characteristics
Current GainBandwidth Product
NTE191
NTE240
fT
IC = 10mA, VCE = 20V,
f = 100MHz, Note 2
45
60
CollectorBase Capacitance
NTE191
NTE240
Ccb
VCB = 20V, IE = 0, f = 1MHz
– – 3.0
– – 8.0
Unit
µA
µA
V
V
V
MHz
MHz
pF
pF
Note 3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.160
(4.06)
.100 (2.54)
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)