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NTE2415 Dataheets PDF



Part Number NTE2415
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE2415 DatasheetNTE2415 Datasheet (PDF)

NTE2414 (NPN) & NTE2415 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 10k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter .

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NTE2414 (NPN) & NTE2415 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 10k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current ICBO VCB = 40V, IE = 0 ICEO VCE = 40V, IB = 0 Emitter Cutoff Current IEBO VEB = 5V, IC = 0 DC Current Gain hFE VCE = 5V, IC = 10mA Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100µA, RBE = ∞ Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA Current Gain–Bandwidth Product NTE2414 fT VCE = 10V, IC = 5mA NTE2415 Min Typ Max Unit – – 0.1 µA – – 0.5 µA 170 250 330 µA 50 – – 50 – – V 50 – – V – 0.1 0.3 V – 250 – MHz – 200 – MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2414 NTE2415 Cob VCB = 10V, f = 1MHz – 3.5 – pF – 5.3 – pF Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio VI(off) VI(on) R1 R1/R2 VCE = 5V, IC = 100µA VCE = 0.2V, IC = 10mA 0.8 1.1 1.5 V 1.0 2.0 4.0 V 7 10 13 kΩ 0.9 1.0 1.1 Output NPN PNP Output Input Input GND .016 (0.48) GND C .098 (2.5) B E Max .074 (1.9) .118 (3.0) Max .037 (0.95) .043 (1.1) .051 (1.3) .007 (0.2) .


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