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NTE2509 Dataheets PDF



Part Number NTE2509
Manufacturers NTE
Logo NTE
Description Silicon Complementary Transistors
Datasheet NTE2509 DatasheetNTE2509 Datasheet (PDF)

NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 500MHz D High Breakdown Voltage: VCEO = 120V Min D Low Reverse Transfer Capacitance and Excellent HF Response Applications: D High–Definition CRT Display Video Output D Wide–Band Amp Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 500MHz D High Breakdown Voltage: VCEO = 120V Min D Low Reverse Transfer Capacitance and Excellent HF Response Applications: D High–Definition CRT Display Video Output D Wide–Band Amp Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product ICBO IEBO hFE fT VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 200mA VCE = 10V, IC = 50mA Min Typ Max Unit – – 0.1 µA – – 0.1 µA 40 – 320 20 – – – 400 – MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2508 NTE2509 Cob VCB = 30V, f = 1MHz – 3.1 – pF – 4.4 – pF Reverse Transfer Capacitance NTE2508 NTE2509 Cre VCB = 30V, f = 1MHz – 2.7 – pF – 4.0 – pF Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA VBE(sat) IC = 50mA, IB = 5mA – – 1.0 V – – 1.0 V .315 (8.0) .118 (3.0) Dia .295 (7.5) EC B .433 (11.0) .610 (15.5) .130 (3.3) .094 (2.4) .


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