Power MOSFET
X2-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY8N65X2 IXFA8N65X2 IXFP8N65X2
D
G S
Symbo...
Description
X2-Class HiPERFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFY8N65X2 IXFA8N65X2 IXFP8N65X2
D
G S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
650
V
650
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
8 16
4 250
50 150 -55 ... +150 150 -55 ... +150
A A A mJ V/ns W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10.65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-252 TO-263 TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250µA
VGS(th)
VDS = VGS, ID = 250µA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
© 2020 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ.
Max.
650
V
3.0
5.0 V
100 nA
10 A 500 A
450 m
VDSS =
ID25 = RDS(on)
650V 8A 450m
TO-252 (IXFY)
TO-263 (IXFA)
TO-220 (IXFP)
G
S D (Tab)
G S D (Tab)
G DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings...
Similar Datasheet