Power MOSFET
Preliminary Technical Information
X2-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intr...
Description
Preliminary Technical Information
X2-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN120N65X2
D G S
S
VDSS = ID25 =
RDS(on)
650V 108A 24m
miniBLOC, SOT-227 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650 650
V V
30 V 40 V
108 A 240 A
15 A 3.5 J
890 W
50 V/ns
-55 ... +150 150
-55 ... +150
C C C
2500 3000
V~ V~
1.5/13 1.3/11.5
Nm/lb.in Nm/lb.in
30 g
S G
G = Gate S = Source
S D
D = Drain
Features
International Standard Package miniBLOC, with Aluminium Nitride
Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values Min. Typ. Max. 650 V
3.5 5.0 V
100 nA
50 A 5 mA
24 m
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies ...
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