IXFN66N85X

Advance Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN66N85X D G S S VDSS = ID25 = RDS(on)  850V 65A 65m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 850 850 V V  30 V  40 V 65 A 140 A 33 A 2.5 J 830 W 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S G G = Gate S = Source S D D = Drain Features  International Standard Package  miniBLOC, with Aluminium Nitride Isolation  Isolation Voltage 2500 V~  High Current Handling Capability  Fast Intrinsic Diode  Avalanche Rated  Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 33A, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.5 V 100 nA 50 A 3 mA 65 m Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Con...