IXFN90N30

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol V DSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ T JM T stg T J VISOL Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S £ I, DM di/dt £ 100 A/ms, V DD £ V, DSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Mounting torque Terminal connection torque IXFN90N30 D G VDSS = 300 V ID25 = 90 A =RDS(on) 33 mW trr £ 250 ns S S Maximum Ratings 300 V 300 V ±20 V ±30 V 90 A 360 A 90 A 64 mJ 3J 5 V/ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 560 -55 ... +150 150 -55 ... +150 W °C °C °C - °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features International standard package miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Symbol V DSS V GH(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 3 mA GS D V = V , I = 8 mA DS GS D...