Power MOSFET
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2...
Description
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2
VDSS = ID25 = RDS(on)
650V 12A 300m
TO-263 AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings 650 650
30 40
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
12 24
6 300
50
180
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 260
°C °C
Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247)
10.65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5 g 3.0 g 6.0 g
G S
D (Tab) TO-220AB (IXTP)
GD S TO-247 (IXTH)
D (Tab)
GDS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
650 V
2.5 4.5 V
100 nA
5 A 50 A
300 m
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Po...
Similar Datasheet