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IXTQ32N65X

IXYS

Power MOSFET

Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VD...



IXTQ32N65X

IXYS


Octopart Stock #: O-1042424

Findchips Stock #: 1042424-F

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Description
Preliminary Technical Information X-Class Power MOSFET N-Channel Enhancement Mode IXTP32N65X IXTQ32N65X IXTH32N65X VDSS = ID25 = RDS(on) 650V 32A 135m TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM IS  ID25, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-220 TO-3P TO-247 Maximum Ratings 650 650 V V 30 V 40 V 32 A 64 A 30 V/ns 500 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.5 V 100 nA 5 A 50 A 135 m GD S TO-3P (IXTQ) Tab G D S TO-247 (IXTH) Tab GDS Tab G = Gate S = Source D = Drain Tab = Drain Features  Low RDS(ON) and QG  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved ...




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