IXTQ32P20T

Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤RDS(on) - 200V - 32A 130mΩ TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 - 200 + 15 + 25 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C - 32 - 96 - 32 1 300 -55 ... +150 150 -55 ... +150 A A A J W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 N/lb. Nm/lb.in. TO-263 TO-220 TO-3P TO-247 2.5 g 3.0 g 5.5 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. - 200 V - 2.0 - 4.0 V ±100 nA - 25 μA -1.25 mA 130 mΩ G D S D (Tab) TO-247 (IXTH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Appli...