Power MOSFET
Preliminary Technical Information
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTA32P20T IXTP32P...
Description
Preliminary Technical Information
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T
TO-263 AA (IXTA)
TO-220AB (IXTP)
VDSS = ID25 = ≤RDS(on)
- 200V - 32A
130mΩ
TO-3P (IXTQ)
G S
D (Tab)
GD S
D (Tab)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD FC Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
- 200 - 200
+ 15 + 25
V V
V V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
- 32 - 96
- 32 1
300
-55 ... +150 150
-55 ... +150
A A
A J
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic body for 10s
300 °C 260 °C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10
N/lb. Nm/lb.in.
TO-263 TO-220 TO-3P TO-247
2.5 g 3.0 g 5.5 g 6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
- 200
V
- 2.0
- 4.0 V
±100 nA
- 25 μA -1.25 mA
130 mΩ
G D S
D (Tab)
TO-247 (IXTH)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG
Advantages
z Easy to Mount z Space Savings z High Power Density
Appli...
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