Power MOSFET
Advance Technical Information
Standard Power MOSFET
N-Channel Enhancement Mode
IXTH 48N20
VDSS = 200 V ID (cont) = 48...
Description
Advance Technical Information
Standard Power MOSFET
N-Channel Enhancement Mode
IXTH 48N20
VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ
Symbol Test Conditions
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V 200 V ±20 V ±30 V
48 A 192 A
48 A 30 mJ 1.0 J
5 V/ns
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
275 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
6g
300 °C
Features
z International standard package JEDEC TO-247 AD
z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times
Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS(th) IGSS IDSS
RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
VDS = VDSS VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200 2.0
V 4.0 V
±100 nA
25 µA 250 µA
50 m Ω
Applications
z Switch-mode and resonant-mode power supplies
z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers
Advantages
z Easy to mount with 1 screw (isolated mounting screw hole...
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