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IXTH48N20

IXYS

Power MOSFET

Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48...


IXYS

IXTH48N20

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Advance Technical Information Standard Power MOSFET N-Channel Enhancement Mode IXTH 48N20 VDSS = 200 V ID (cont) = 48 A RDS(on) = 50 mΩ Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 200 V 200 V ±20 V ±30 V 48 A 192 A 48 A 30 mJ 1.0 J 5 V/ns TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain 275 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C Features z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z High commutating dv/dt rating z Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 V DC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 15 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 200 2.0 V 4.0 V ±100 nA 25 µA 250 µA 50 m Ω Applications z Switch-mode and resonant-mode power supplies z Motor controls z Uninterruptible Power Supplies (UPS) z DC choppers Advantages z Easy to mount with 1 screw (isolated mounting screw hole...




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