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CEFB105 Dataheets PDF



Part Number CEFB105
Manufacturers Comchip Technology
Logo Comchip Technology
Description SMD Efficient Fast Recovery Rectifier
Datasheet CEFB105 DatasheetCEFB105 Datasheet (PDF)

SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFB101 Thru CEFB105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2..

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SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw CEFB101 Thru CEFB105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop SMB/DO-214AA 0.083(2.11) 0.075(1.91) 0.185(4.70) 0.160(4.06) 0.155(3.94) 0.130(3.30) Mechanical Data 0.096(2.44) 0.083(2.13) 0.012(0.31) 0.006(0.15) Case: JEDEC DO-214AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.093 gram 0.050(1.27) 0.030(0.76) 0.220(5.59) 0.200(5.08) 0.008(0.20) 0.203(0.10) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol V RRM V DC V RMS I FSM CEFB 101 50 50 35 CEFB 102 100 100 70 CEFB 103 200 200 140 CEFB 104 400 400 280 CEFB 105 600 600 420 Unit V V V A 30 Io VF Trr IR R 0.875 25 1.0 1.1 35 1.25 50 A V nS uA 5.0 250 13 -55 to +150 -55 to +150 JL C/W C C Tj T STG Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. MDS0208004C Page 1 SMD Efficient Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CEFB101 Thru CEFB105) Fig. 1 - Reverse Characteristics 100 10 Fig.2 - Forward Characteristics CEFB101-103 Reverse Current ( uA ) Tj=125 C 10 Forward current ( A ) 1.0 CEFB104 1.0 Tj=75 C 0.1 CEFB105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 Tj=25 C 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 35 30 Fig. 4 - Non Repetitive Forward Surge Current Peak Surge Forward Current ( A ) 50 8.3mS Single Half Sine Wave JEDEC methode f=1MHz and applied 4VDC reverse voltage Tj=25 C Junction Capacitance (pF) 40 25 20 30 Tj=25 C 20 CEFB101-103 15 10 5 0 CEFB104-105 10 0 0.01 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 2.8 Average Forward Current ( A ) trr | | | | | | | | 2.4 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. ( ) PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0208004C Page 2 .


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