CEG9926

CEG9926 Nov. 2002 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ȀȀȀ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range G1 S1 S1 D1 9 TSSOP-8 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 20 Ć8 Ć4.5 Unit V V A A A W C Ć25 1.7 ȑȎȐ -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 125 C/W 9-17 CEG9926 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS C Symbol Condition VGS= 0V, ID=250µA VDS=20V, VGS=0V VGS=Ć8V, VDS=0V VDS=VGS, ID=250µA VGS=4.5V, ID=4.5A VGS=4.0V, ID=5A VGS=2.5V, ID=3.5A Min Typ C Max Unit 20 1 V µA ĆȑȐȐ nA 0.5 24 23 32 ON CHARACTERISTICS b Gate Threshold Voltage 1.0 30 40 V mΩȀȀȀ mΩ mΩ 9 Drain-Source On-State Resistance On-State Drain Current Forward Transconductance VDS=5V, VGS=4.5V VDS=10V, ID=4.5A 10 10 500 300 140 A S PF PF PF DYNAMIC CHARACTERISTICS Input Capacitance Output Ca...