CEM8435A

CEM8435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.9A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -7.9 IDM -25 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Specification and data are subject to change without notice . 5 - 162 Rev 1. 1998.March http://www.cetsemi.com CEM8435A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characte...