IXTN120N25

High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS ID25 RDS(on) = = = 250 V 120 A 20 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TTJsMtg TL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings 250 V 250 V ±20 V ±30 V 120 A 75 A 480 A 90 A 80 mJ 4.0 J 10 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 730 -55 ... +150 150 -55 ... +150 300 0.7/6 10 W °C °C °C °C Nm/lb.in. g Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Internationalstandardpackage Fast switching times Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VPuGSlse=te1s0t,Vt,≤ID3=000.m5 sID,2d5 uty cycle d ≤ 2% Characteristic Values Min. Typ. Max. 250 V 2.0 4.0 V ±200 nA 50 µA 3 mA 20 mΩ Applications Motorcontrols DC choppers Switched-mode power supplies Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density © 2003 IXYS All...