IXTN170P10P

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings -100 -100 V V ±20 ±30 -170 - 510 -170 3.5 V V A A A J 10 V/ns 890 W -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V ±100 nA - 50 μA - 250 μA 12 mΩ VDSS ID25 = = ≤RDS(on) -100V -170A 12mΩ miniBLOC, SOT-227 E153432 S G G = Gate S = Source S D D = Drain Either Source Terminal at miniBLOC can be used as Main or Kelvin Source. Features z International Standard Package z miniBLOC, with Aluminium Nitride Isolation z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Push Pull...