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IXTP8N65X2M

IXYS

Power MOSFET

Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 6...


IXYS

IXTP8N65X2M

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Advance Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N65X2M VDSS = ID25 = RDS(on) 650V 4A 550m N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 V V 30 V 40 V 4A 16 A 4A 250 mJ 50 V/ns 32 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 4A, Note 1 Characteristic Values Min. Typ. Max. 650 V 3.0 5.0 V 100 nA 10 A 150 A 550 m OVERMOLDED GDS G = Gate S = Source D = Drain Features  International Standard Package  Plastic Overmolded Tab  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100668(6/15) Symbol ...




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