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Part Number IXTR120P20T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR120P20T DatasheetIXTR120P20T Datasheet (PDF)

  IXTR120P20T   IXTR120P20T
Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTR120P20T VDSS = ID25 = ≤RDS(on) trr ≤ - 200V - 90A 32mΩ 300ns ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings - 200 - 200 V V ±15 ±25 - 90 - 400 -100 3 V V A A A J 10 V/ns 595 W -55 ... +150 150 -55 ... +150 300 260 2500 °C °C °C °C °C V∼ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 60.



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