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Part Number IXTR140P10T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR140P10T DatasheetIXTR140P10T Datasheet (PDF)

  IXTR140P10T   IXTR140P10T
TrenchPTM Power MOSFET IXTR140P10T P-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = ≤RDS(on) -100V - 110A 11mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings -100 -100 ±15 ±25 - 110 - 400 -140 2.5 V V V V A A A J 10 270 - 55 ... +150 150 - 55 ... +150 300 260 2500 V/ns W °C °C °C °C °C V~ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 70A, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 .



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