Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR16P60P
VDSS = ID25 = ≤RDS(on)
- 600V - 10A
790mΩ
ISOPLUS247 (IXTR) E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS
dV/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
Continuous Transient
- 600 - 600
±20 ±30
V V
V V
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
- 10 A - 48 A
- 16 A 2.5 J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
10
190
-55 ... +150 150
-55 ... +150
V/ns W °C °C °C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s
300 260
50/60 Hz, RMS
t = 1min
2500
IISOL ≤ 1mA Mounting force
t = 1s
3000
20..120 / 4.5..27
°C °C V~ V~
N/lb.
5g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = -10V, ID = .