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Part Number IXTR16P60P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR16P60P DatasheetIXTR16P60P Datasheet (PDF)

  IXTR16P60P   IXTR16P60P
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR16P60P VDSS = ID25 = ≤RDS(on) - 600V - 10A 790mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 600 - 600 ±20 ±30 V V V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C - 10 A - 48 A - 16 A 2.5 J IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 10 190 -55 ... +150 150 -55 ... +150 V/ns W °C °C °C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 50/60 Hz, RMS t = 1min 2500 IISOL ≤ 1mA Mounting force t = 1s 3000 20..120 / 4.5..27 °C °C V~ V~ N/lb. 5g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = .



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