IXTK170P10P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTK170P10P IXTX170P10P VDSS = ID25 = ≤RDS(on) -100V -170A 12mΩ TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force (PLUS247) Mounting Forque (TO-264) PLUS247 TO-264 Maximum Ratings -100 -100 V V ±20 ±30 -170 -160 - 510 V V A A A -170 A 3.5 J 10 V/ns 890 W -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 1.13 / 10 6 10 °C °C °C °C °C N/lb. Nm/lb.in. g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V ±100 nA - 50 μA - 250 μA 12 mΩ G D S PLUS247 (IXTX) Tab G DS Tab G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages z Rugged PolarPTM Process z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switches z Pus...