IXTR170P10P

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg VISOL TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings -100 -100 V V ±20 ±30 -108 - 510 -170 3.5 V V A A A J 10 V/ns 312 W -55 ... +150 150 -55 ... +150 2500 3000 °C °C °C V~ V~ 300 260 20..120 / 4.5..27 6 °C °C N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250µA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 85A, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V ±100 nA - 50 µA - 250 µA 13 mΩ Isolated Tab G = Gate S = Source D = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Dynamic dv/dt Rating z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low Q G z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space S...