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Part Number IXTR20P50P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR20P50P DatasheetIXTR20P50P Datasheet (PDF)

  IXTR20P50P   IXTR20P50P
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR20P50P VDSS = ID25 = ≤RDS(on) - 500V - 13A 490mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force Maximum Ratings - 500 - 500 V V ±20 V ±30 V -13 A - 60 A - 20 A 2.5 J 10 V/ns 190 W -55 ... +150 150 -55 ... +150 300 260 t = 1min 2500 t = 1s 3000 20..120 / 4.5..27 5 °C °C °C °C °C V~ V~ N/lb. g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = -10A, Note 1 .



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