PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR40P50P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ ,RMS, t= 1min Mounting Force
Maximum Ratings - 500 - 500
±20 ±30 - 22 -120
- 40
3.5
V V
V V
A A
A
J
10
312
-55 ... +150 150
-55 ... +150
300 260
2500
20..120/4.5..27
5
V/ns
W
°C °C °C °C °C V~ N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = -1mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = -10V, ID = - 20A, Note 1
Characteristic Values Min. Typ. Max.
- 500
V
- 2.0
- 4.0 V
±100 nA
- 50 μA - 250 μA
260 mΩ
VDSS = ID25 = ≤RDS(on)
- 500V.