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Part Number IXTR62N15P
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTR62N15P DatasheetIXTR62N15P Datasheet (PDF)

  IXTR62N15P   IXTR62N15P
Preliminary Technical Information PolarHTTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTC 62N15P IXTR 62N15P VDSS = ID25 = RDS(on) ≤ 150 36 45 V A mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Mounting force ISOPLUS220 ISOPLUS247 ISOPLUS220 ISOPLUS247 Maximum Ratings 150 V 150 V ± 20 ± 30 36 150 50 30 1.0 V V A A A mJ J 10 V/ns 150 -55 ... +175 150 -55 ... +150 300 11..65 / 2.5..15 20..120 / 4.5..25 3 5 W °C °C °C °C N/lb N/lb g g Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 VDC, VDS = 0 IDSS VDS = VDSS VGS =.



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