Preliminary Technical Information
PolarHTTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
IXTC 62N15P IXTR 62N15P
VDSS = ID25 =
RDS(on) ≤
150 36 45
V A mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL FC
Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS220 ISOPLUS247
ISOPLUS220 ISOPLUS247
Maximum Ratings
150 V 150 V
± 20 ± 30
36 150
50 30 1.0
V V
A A
A mJ
J
10 V/ns
150
-55 ... +175 150
-55 ... +150
300
11..65 / 2.5..15 20..120 / 4.5..25
3 5
W
°C °C °C
°C
N/lb N/lb
g g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS =.