IXTR90P10P

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P10P D G S VDSS = ID25 RDS(on) = ≤ - 100V - 57A 27mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ , RMS t = 1min Mounting Force Maximum Ratings - 100 - 100 V V ±20 ±30 - 57 - 225 - 90 2.5 V V A A A J 10 V/ns 190 W -55 ... +150 150 -55 ... +150 300 260 2500 20..120/4.5..27 6 °C °C °C °C °C V~ N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 45A, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.0 - 4.0 V ±100 nA - 25 μA - 200 μA 27 mΩ G DS Isolated Tab G = Gate D = Drain S = Source Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z Hig...