PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR90P10P
D G
S
VDSS =
ID25 RDS(on)
= ≤
- 100V - 57A
27mΩ
ISOPLUS247 E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ , RMS t = 1min Mounting Force
Maximum Ratings - 100 - 100
V V
±20 ±30
- 57 - 225
- 90 2.5
V V
A A
A J
10 V/ns
190 W
-55 ... +150 150
-55 ... +150
300 260
2500
20..120/4.5..27
6
°C °C °C °C °C V~ N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = -10V, ID = - 45A, Note 1
Characteristic Values
Min.
Typ.
Max.
-100
V.