PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR90P20P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ , RMS t = 1min Mounting Force
Maximum Ratings - 200 - 200
V V
±20 ±30
- 53 - 270
- 90 3.5
V V
A A
A J
10 V/ns
312 W
-55 ... +150 150
-55 ... +150
300 260
2500
20..120/4.5..27
6
°C °C °C °C °C V~ N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = - 250μA
- 200
V
VGS(th)
VDS = VGS, ID = -1mA
- 2.0
- 4.0 V
IGSS VGS = ±20V, VDS = 0V
±100 nA
IDSS VDS = VDSS , VGS = 0V TJ = 125°C
- 50 μA - 250 μA
RDS(on)
VGS = -10V, ID = - 45A, Note 1
48 mΩ
VDSS = ID25 = ≤RDS(on).