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Part Number IXTT34N65X2HV
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTT34N65X2HV DatasheetIXTT34N65X2HV Datasheet (PDF)

  IXTT34N65X2HV   IXTT34N65X2HV
X2-Class Power MOSFET Advance Technical Information IXTT34N65X2HV VDSS = ID25 = RDS(on) 650V 34A 96m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Maximum Ratings 650 650 V V 30 V 40 V 34 A 68 A 17 A 1J 50 V/ns 540 W -55 ... +150 150 -55 ... +150 300 260 C C C °C °C 4g TO-268HV (IXTT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μ.



IXTR90P20P IXTT34N65X2HV IXXA50N60B3


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