650V IGBTs
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through IGBT for 20-60 kH...
Description
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = IC110 = V ≤CE(sat) tfi(typ) =
650V 30A
2.2V 32ns
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82Ω, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
650 V 650 V
±20 V ±30 V
52 A 30 A
113 A
20 A 250 mJ
ICM = 48
≤@VCE VCES
10
A μs
230
-55 ... +175 175
-55 ... +175
300 260
2.5
W
°C °C °C
°C °C
g
TO-263
G E
D (Tab)
G = Gate E = Emitter
C = Collector Tab = Collector
Features
z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z High Voltage Package
Advantages
z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
24A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
650 V
3.0 5.5 V
10 μA 250 μA
±100 nA
1.85 2.30
2.20 V V
Applications
z Power Inverters z UPS z...
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