IXXH30N60C3D1

XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 60 A 30 A 30 A 110 A 20 A 250 mJ ICM = 48 @VCE VCES 10 A μs 270 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 600 V 3.5 6.0 V 100 A 1 mA 100 nA 1.85 2.30 2.40 V V VCES = 600V IC110 = 30A VCE(sat)  2.4V tfi(typ) = 32ns TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  Optimized for 20-60kHz Switching  Square RBSOA  Anti-Parallel Ultra Fast Diode  Avalanche Capability  Short Circuit Capability  International Standard Package Advantages  High Power Density  175°C ...