650V IGBTs
Preliminary Technical Information
XPTTM 650V IGBT GenX4TM
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXXH3...
Description
Preliminary Technical Information
XPTTM 650V IGBT GenX4TM
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXXH30N65B4
C G
E
VCES = IC110 = V ≤CE(sat) tfi(typ) =
650V 30A
2.0V 57ns
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 15Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82Ω, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
650 V 650 V
±20 V ±30 V
65 A 30 A
146 A
ICM = 60
≤@VCE VCES
10
A μs
230
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6
W
°C °C °C
°C °C
Nm/lb.in.
g
TO-247 AD
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package
Advantages
z High Power Density z Extremely Rugged z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
650 V
4.0 6.5 V
10 μA 250 μA
±100 nA
1.66 1.87
2.00 V V
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuit...
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