DatasheetsPDF.com

IXYP15N65C3D1

IXYS

IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Thr...


IXYS

IXYP15N65C3D1

File Download Download IXYP15N65C3D1 Datasheet


Description
Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = 650V IC110 = 15A VCE(sat)  2.5V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 38 15 23 80 5 100 ICM = 30 @VCE VCES 8 200 -55 ... +175 175 -55 ... +175 A A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in N/lb TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 15A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 400 A 100 nA 1.96 2.45 2.50 V V © 2015 IXYS CORPORATION, All Rights Reserved G E C (Tab) TO-220AB (IXYP) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector F...




Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)