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IXYH20N65C3

IXYS

IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXY...


IXYS

IXYH20N65C3

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60 kHz Switching IXYA20N65C3 IXYH20N65C3 VCES = 650V IC110 = 20A VCE(sat)  2.50V tfi(typ) = 28ns TO-263 AA (IXYA) Symbol VCES VCGR VGES VGEM IC25 IICCM110 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-263 TO-247 Maximum Ratings 650 V 650 V ±20 V ±30 V 50 A 20 A 105 A 10 A 200 mJ ICM = 40 VCE VCES 10 A μs 230 -55 ... +175 175 -55 ... +175 300 260 1.13/10 2.5 6.0 W °C °C °C °C °C Nm/lb.in g g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 150 A 100 nA 2.27 2.44 2.50 V V G E C (Tab) TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  International Standard Packages Advantages ...




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