IXYA20N65C3D1

XPTTM 650V IGBT GenX3TM w/Diode IXYA20N65C3D1 IXYP20N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 20 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 50 20 18 105 10 200 ICM = 40 VCE VCES 10 200 -55 ... +175 175 -55 ... +175 A A A A A mJ A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in N/lb TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 10 A 400 A 100 nA 2.27 2.44 2.50 V V © 2015 IXYS CORPORATION, All Rights Reserved VCES = 650V IC110 = 20A VCE(sat)  2.50V tfi(typ) = 28ns TO-263 AA (IXYA) G E C (Tab) TO-220AB (IXYP) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for 20-60kHz Switchi...