IXYA8N90C3D1

900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYA8N90C3D1 IXYP8N90C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 900 V 900 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 30 Clamped Inductive Load TC = 25°C 20 8 12 48 4 15 ICM = 16 @VCE VCES 125 -55 ... +175 175 -55 ... +175 A A A A A mJ A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-220) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 950 V 3.5 6.0 V 60 A 400 μA 100 nA 2.15 2.60 3.00 V V VCES = 900V IC110 = 8A VCE(sat)  3.0V tfi(typ) = 130ns TO-263 AA (IXYA) G E C (Tab) TO-220AB (IXYP) GC E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Anti-Parallel Ultra Fast Diode  Avalanche Rated  International Standard Packages A...