Document
Advance Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXYH120N65C3
VCES = 650V IC110 = 120A VCE(sat) 2.8V tfi(typ) = 46ns
Symbol
VCES VCGR VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient
TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
650 650
±20 ±30
V V
V V
260 A 160 A 120 A
620 A
60 A 1J
ICM = 240
VCE VCES
8
A μs
1360
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6
W
°C °C °C
°C °C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
100A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
25 A 750 A
100 nA
2.3 2.8 V 2.8 V
TO-247
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package
Advantages
High Power Density Low Gate Drive Requirement
Applications
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100664(5/15)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 120A, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 2
Note 2
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 2
Note 2
RthJC RthCS
Characteristic Values Min. Typ. Max.
40 68
S
6900 376 140
pF pF pF
265 nC 50 nC
110 nC
28 ns 29 ns 1.25 mJ 127 ns 46 ns 0.50 mJ
27 ns 30 ns 2.45 mJ 156 ns 60 ns 0.70 mJ
0.11 °C/W 0.21 °C/W
IXYH120N65C3
TO-247 (IXYH) Outline
D A A2
A E B 0P 0K M D B M
R D
R1 1
L1
L
Q S D2
0P1 2 3 IXYS OPTION
C
D1 4
E1
A1 b
c b2
b4 e
1 - Gate 2,4 - Collector
J MCAM
3 - Emitter
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IC - Amperes
IC - Amperes
IXYH120N65C3
240 200 160 120
80 40
0 0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGE = 15V 13V 11V 10V
9V
8V
7V 6V 0.5 1 1.5 2 2.5 3 3.5 4
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
240 VGE = 15V 13V
200 11V 10V
160 9V
120 8V
80 7V
40 6V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VCE - Volts
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5
7
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 240A
120A
60A 8 9 10 11 12 13 14 15
VGE - Volts
IC - Amperes
VCE(sat) - Normalized
IC - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300 VGE = 15V 13V 11V
250
10V
200 9V
150 8V
100
50 7V
6V 0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4. Dependence of VCE(sat) on Junction Temperature
2.0
VGE = 15V 1.8 1.6
I C = 240A
1.4 I C = 120A
1.2
1.0
0.8 I C = 60A
0.6 -50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
200
180
160
140
120 TJ = 150ºC
100 25ºC 80 - 40ºC
60
40
20
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
VCE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXYH120N65C3
g f s - Siemens
Fig. 7. Transconductance
140 TJ = - 40ºC
120
100 25ºC 150ºC
80
60
40
20
0 0 20 40 60 80 100 120 140 160 180 200 220
IC - Amperes
VGE - Volts
16
14 VCE = 325V IC = 120A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0 0 40 80 120 160 200
QG - NanoCoulombs
240
Capacitance - PicoFarads
10,000
Fig. 9. Capacitance.