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IXYH120N65C3 Dataheets PDF



Part Number IXYH120N65C3
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXYH120N65C3 DatasheetIXYH120N65C3 Datasheet (PDF)

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH120N65C3 VCES = 650V IC110 = 120A VCE(sat)  2.8V tfi(typ) = 46ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ .

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Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYH120N65C3 VCES = 650V IC110 = 120A VCE(sat)  2.8V tfi(typ) = 46ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 650 650 ±20 ±30 V V V V 260 A 160 A 120 A 620 A 60 A 1J ICM = 240 VCE VCES 8 A μs 1360 -55 ... +175 175 -55 ... +175 300 260 1.13/10 6 W °C °C °C °C °C Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 25 A 750 A 100 nA 2.3 2.8 V 2.8 V TO-247 G CE G = Gate E = Emitter Tab C = Collector Tab = Collector Features  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability  International Standard Package Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2015 IXYS CORPORATION, All Rights Reserved DS100664(5/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 120A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS Characteristic Values Min. Typ. Max. 40 68 S 6900 376 140 pF pF pF 265 nC 50 nC 110 nC 28 ns 29 ns 1.25 mJ 127 ns 46 ns 0.50 mJ 27 ns 30 ns 2.45 mJ 156 ns 60 ns 0.70 mJ 0.11 °C/W 0.21 °C/W IXYH120N65C3 TO-247 (IXYH) Outline D A A2 A E B 0P 0K M D B M R D R1 1 L1 L Q S D2 0P1 2 3 IXYS OPTION C D1 4 E1 A1 b c b2 b4 e 1 - Gate 2,4 - Collector J MCAM 3 - Emitter Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IC - Amperes IC - Amperes IXYH120N65C3 240 200 160 120 80 40 0 0 Fig. 1. Output Characteristics @ TJ = 25ºC VGE = 15V 13V 11V 10V 9V 8V 7V 6V 0.5 1 1.5 2 2.5 3 3.5 4 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 240 VGE = 15V 13V 200 11V 10V 160 9V 120 8V 80 7V 40 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VCE - Volts 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 7 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage TJ = 25ºC I C = 240A 120A 60A 8 9 10 11 12 13 14 15 VGE - Volts IC - Amperes VCE(sat) - Normalized IC - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 VGE = 15V 13V 11V 250 10V 200 9V 150 8V 100 50 7V 6V 0 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 1.8 1.6 I C = 240A 1.4 I C = 120A 1.2 1.0 0.8 I C = 60A 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 200 180 160 140 120 TJ = 150ºC 100 25ºC 80 - 40ºC 60 40 20 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VCE - Volts © 2015 IXYS CORPORATION, All Rights Reserved IXYH120N65C3 g f s - Siemens Fig. 7. Transconductance 140 TJ = - 40ºC 120 100 25ºC 150ºC 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 200 220 IC - Amperes VGE - Volts 16 14 VCE = 325V IC = 120A 12 IG = 10mA Fig. 8. Gate Charge 10 8 6 4 2 0 0 40 80 120 160 200 QG - NanoCoulombs 240 Capacitance - PicoFarads 10,000 Fig. 9. Capacitance.


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