IGBT
1200V XPTTM IGBT GenX3TM
Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXYH40N120B3
VCES = IC110 = V ≤CE(sat...
Description
1200V XPTTM IGBT GenX3TM
Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXYH40N120B3
VCES = IC110 = V ≤CE(sat) tfi(typ) =
1200V 40A
2.9V 183ns
TO-247 AD
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
1200 1200
V V
±20 V ±30 V
96 A 40 A
200 A
20 A 400 mJ
ICM = 80
≤@VCE VCES
577
A W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA 500 μA
±100 nA
2.4 2.9 V 3.1 V
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of
Vce(sat) z Avalanche Rated z International Standard Package
Advantages
z High Power Density z Low Gate Drive Requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machin...
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