IGBT
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
IXYH40N65C3D1 IXYQ40N65C3D1
Extreme Light Punch Throug...
Description
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
IXYH40N65C3D1 IXYQ40N65C3D1
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = 650V IC110 = 40A VCE(sat) 2.35V tfi(typ) = 20ns
TO-247 (IXYH)
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient
TC = 25°C
TTCC
= 110°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247 TO-3P
Maximum Ratings
650 V 650 V
±20 V ±30 V
80 A 40 A 50 A
180 A
20 A 300 mJ
ICM = 80
@VCE VCES
5
A μs
300
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6.0 5.5
W
°C °C °C
°C °C
Nm/lb.in
g g
G CE
TO-3P (IXYQ)
Tab
G C E
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability
Advantages
High Power Density Extremely Rugged Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values...
Similar Datasheet
- IXYQ40N65C3D1 IGBT - IXYS