IGBT
XPTTM 900V IGBT GenX3TM
High-Speed IGBT for 20-50 kHz Switching
IXYT80N90C3 IXYH80N90C3
Symbol
VCES VCGR
VGES VGEM
IIC...
Description
XPTTM 900V IGBT GenX3TM
High-Speed IGBT for 20-50 kHz Switching
IXYT80N90C3 IXYH80N90C3
Symbol
VCES VCGR
VGES VGEM
IICLR25MS IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
900 V 900 V
±20 V ±30 V
165 A 160 A
80 A
360 A
ICM = 160
@VCE VCES
830
A W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
4g 6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
60A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
950 V
3.5 5.5 V
25 A 750 A
100 nA
2.3 2.7 V 2.9 V
VCES = 900V IC110 = 80A VCE(sat) 2.7V tfi(typ) = 86ns
TO-268 (IXYT)
G E C (Tab)
TO-247 (IXYH)
GCE
C (Tab)
G = Gate E = Emiiter
C = Collector Tab = Collector
Features
Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of
Vce(sat) International Standard Packages
Advantages
High Power Density Low Gate Drive Requirement
Applications
High Frequency Power Inverters UPS Motor Drives SMPS P...
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