IGBT
1200V XPTTM IGBT GenX3TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYJ20N120C3D1
S...
Description
1200V XPTTM IGBT GenX3TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYJ20N120C3D1
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
Continuous Transient
TC = 25°C
TTCC
= 110°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200 1200
V V
±20 V ±30 V
21 A 9A
15 A
84 A
10 A 400 mJ
ICM = 40
@VCE VCES
105
A W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
2500 5
V~ g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1 TJ
=
150C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
25 A 350 μA
100 nA
3.4 V 4.0 V
VCES = 1200V IC110 = 9A VCE(sat) 3.4V tfi(typ) = 108ns
ISO TO-247TM E153432
G CE
G = Gate E = Emitter
Isolated Tab C = Collector
Features
Optimized for Low Switching Losses Silicon Chip on Direct-Copper Bond
(DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Square RBSOA Positive Thermal Coefficient of
Vce(sat) Anti-Parallel Ultra F...
Similar Datasheet
- IXYJ20N120C3D1 IGBT - IXYS