IXYJ30N120C3D1

Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYJ30N120C3D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque 50/60 Hz, RM, t = 1min Maximum Ratings 1200 1200 V V ±20 V ±30 V 32 A 14 A 15 A 128 A 20 A 400 mJ ICM = 60 VCE VCES 140 A W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 2500 5 V~ g VCES = 1200V IC110 = 14A VCE(sat)  3.3V tfi(typ) = 88ns ISO TO-247TM E153432 G CE G = Gate E = Emitter Isolated Tab C = Collector Features  Optimized for Low Switching Losses  Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  2500V~ Electrical Isolation  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  Anti-Parallel Ultra Fast Diode  Avalanche Rated Advantages  High Power Density  Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note ...