IGBT
Preliminary Technical Information
1200V XPTTM IGBTs GenX3TM
IXYK100N120B3 IXYX100N120B3
Extreme Light Punch Through I...
Description
Preliminary Technical Information
1200V XPTTM IGBTs GenX3TM
IXYK100N120B3 IXYX100N120B3
Extreme Light Punch Through IGBT for 5-30 kHz Switching
VCES = IC110 = V ≤CE(sat) tfi(typ) =
1200V 100A
2.6V 240ns
TO-264 (IXYK)
Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
Continuous Transient
1200 1200
±20 ±30
V V
V V
TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load
TC = 25°C
225 160 100 530
50 1.2
ICM = 200
≤@VCE VCES
1150
-55 ... +175 175
-55 ... +175
A A A A
A J
A
W
°C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 °C 260 °C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
TO-264 PLUS247
10 g 6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
IC110,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA 1 mA
±100 nA
2.20 2.76
2.60 V V
G C E
PLUS247 (IXYX)
Tab
G
G C
E
Tab
G = Gate C = Collector
E = Emitter Tab = Collector
Features
z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of
Vce(sat) z Avalan...
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