DatasheetsPDF.com

IXYK200N65B3 Dataheets PDF



Part Number IXYK200N65B3
Manufacturers IXYS
Logo IXYS
Description IGBT
Datasheet IXYK200N65B3 DatasheetIXYK200N65B3 Datasheet (PDF)

Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYK200N65B3 IXYX200N65B3 VCES = IC110 = VCE(sat)  tfi(typ) = 650V 200A 1.70V 157ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Termina.

  IXYK200N65B3   IXYK200N65B3


Document
Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYK200N65B3 IXYX200N65B3 VCES = IC110 = VCE(sat)  tfi(typ) = 650V 200A 1.70V 157ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 650 V 650 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 0 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 10, Non Repetitive TC = 25°C 410 160 200 1100 100 1 ICM = 200 @VCE VCES 8 1560 -55 ... +175 175 -55 ... +175 A A A A A J A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) 300 260 1.13/10 20..120 /4.5..27 °C °C Nm/lb.in N/lb TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 25 μA 2 mA ±100 nA 1.40 1.56 1.70 V V G C E PLUS247 (IXYX) Tab G G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features  International Standard Packages  Optimized for 10-30kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2015 IXYS CORPORATION, All Rights Reserved DS100697(12/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz RGi Gate Input Resistance Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 0 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 0 Note 2 RthJC RthCS Characteristic Values Min. Typ. Max. 46 78 S 10.9 nF 554 pF 173 pF 7 340 nC 84 nC 136 nC 60 ns 108 ns 5.00 mJ 370 ns 157 ns 4.00 mJ 60 ns 110 ns 6.36 mJ 470 ns 230 ns 5.60 mJ 0.096 °C/W 0.15 °C/W IXYK200N65B3 IXYX200N65B3 TO-264 Outline Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 bb12 1.91 2.13 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .090 .075 .205 .100 .085 .045 .075 .115 .055 .084 .123 .024 .819 .620 .031 .840 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IC - Amperes Fig. 1. Output Characteristics @ TJ = 25ºC 300 VGE = 15V 250 12V 10V 11V 200 9V 150 8V 100 50 7V 6V 0 0 0.5 1 1.5 2 2.5 3 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150ºC 300 VGE = 15V 13V 250 11V 10V 9V 200 150 100 50 0 0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 7 8V 7V 6V 0.5 1 1.5 2 2.5 3 3.5 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4 TJ = 25ºC I C = 300A 200A 100A 8 9 10 11 12 13 14 15 VGE - Volts IC - Amperes VCE(sat) - Normalized IC - Amperes IXYK200N65B3 IXYX200N65B3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 300 VGE = 15V 11V 10V 250 9V 200 150 8V 100 50 7V 6V 0 012345678 VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.8 VGE = 15V 1.6 1.4 I C = 300A 9 10 1.2 1.0 I C = 200A 0.8 I C = 100A 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 250 200 150 TJ = 150ºC 25ºC .


IXYX140N90C3 IXYK200N65B3 IXYX200N65B3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)