Document
Advance Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 10-30kHz Switching
IXYK200N65B3 IXYX200N65B3
VCES = IC110 = VCE(sat) tfi(typ) =
650V 200A
1.70V 157ns
TO-264 (IXYK)
Symbol
VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V 650 V
±20 V ±30 V
TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 0 Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C RG = 10, Non Repetitive
TC = 25°C
410 160 200 1100
100 1
ICM = 200
@VCE VCES
8
1560 -55 ... +175
175 -55 ... +175
A A A A A J A
μs
W °C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-264) Mounting Force (PLUS247)
300 260 1.13/10 20..120 /4.5..27
°C °C Nm/lb.in N/lb
TO-264 PLUS247
10 g 6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1 TJ = 150°C
Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
25 μA 2 mA
±100 nA
1.40 1.56
1.70 V V
G C E
PLUS247 (IXYX)
Tab
G
G C
E
Tab
G = Gate C = Collector
E = Emitter Tab = Collector
Features
International Standard Packages Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability
Advantages
High Power Density Low Gate Drive Requirement
Applications
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100697(12/15)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)
gfs IC = 60A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
RGi Gate Input Resistance
Qg(on) Qge Qgc
IC = 200A, VGE = 15V, VCE = 0.5 • VCES
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 0
Note 2
td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 0
Note 2
RthJC RthCS
Characteristic Values
Min.
Typ. Max.
46 78
S
10.9 nF 554 pF 173 pF
7
340 nC 84 nC
136 nC
60 ns 108 ns 5.00 mJ 370 ns 157 ns 4.00 mJ
60 ns 110 ns 6.36 mJ 470 ns 230 ns 5.60 mJ
0.096 °C/W 0.15 °C/W
IXYK200N65B3 IXYX200N65B3
TO-264 Outline
Terminals: 1 = Gate 2,4 = Collector 3 = Emitter
PLUS247TM Outline
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate 2 - Collector 3 - Emitter
Dim. Millimeter Min. Max.
A 4.83 5.21
A1 2.29 2.54 A2 1.91 2.16
b 1.14 1.40
bb12
1.91 2.13 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC L 19.81 20.32 L1 3.81 4.32
Q 5.59 6.20 R 4.32 4.83
Inches Min. Max.
.190 .090 .075
.205 .100 .085
.045 .075 .115
.055 .084 .123
.024 .819 .620
.031 .840 .635
.215 BSC .780 .800 .150 .170
.220 0.244 .170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IC - Amperes
Fig. 1. Output Characteristics @ TJ = 25ºC
300
VGE = 15V
250
12V 10V 11V
200 9V
150 8V
100
50 7V
6V 0
0 0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
300 VGE = 15V 13V
250 11V 10V 9V
200
150
100
50
0 0
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0
7
8V 7V
6V 0.5 1 1.5 2 2.5 3 3.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
4
TJ = 25ºC
I C = 300A
200A
100A 8 9 10 11 12 13 14 15
VGE - Volts
IC - Amperes
VCE(sat) - Normalized
IC - Amperes
IXYK200N65B3 IXYX200N65B3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
300
VGE = 15V 11V
10V
250 9V
200
150 8V
100
50 7V
6V 0
012345678
VCE - Volts
Fig. 4. Dependence of VCE(sat) on Junction Temperature
1.8
VGE = 15V 1.6
1.4
I C = 300A
9 10
1.2 1.0 I C = 200A
0.8 I C = 100A
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Input Admittance
250
200
150
TJ = 150ºC
25ºC
.