CEM9435

CEM9435 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -5 IDM -20 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2012.May http://www.cetsemi.com CEM9435 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A -1 -3 V 50 60 mΩ 70 95 mΩ Input Cap...