IXYR100N120C3

1200V XPTTM IGBT GenX3TM (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching IXYR100N120C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings 1200 1200 V V ±20 V ±30 V 104 A 58 A 480 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 484 A W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 2500 V~ 20..120/4.5..27 5 N/lb. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 μA 1.25 mA ±100 nA 2.9 3.5 V 4.1 V VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 58A 3.5V 110ns ISOPLUS247TM G CE Isolated Tab G = Gate E = Emitter C = Collector Features z Optimized for Low Switching Losses z Square RBSOA z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High P...