IGBT
1200V XPTTM IGBT GenX3TM
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYR100N120C3
Symbol
VCES...
Description
1200V XPTTM IGBT GenX3TM
(Electrically Isolated Tab)
High-Speed IGBT for 20-50 kHz Switching
IXYR100N120C3
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
VISOL
FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
1200 1200
V V
±20 V ±30 V
104 A 58 A
480 A
50 A 1.2 J
ICM = 200
≤@VCE VCES
484
A W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
2500
V~
20..120/4.5..27 5
N/lb. g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
100A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA 1.25 mA
±100 nA
2.9 3.5 V 4.1 V
VCES IC110 VCE(sat) tfi(typ)
= =
≤ =
1200V 58A
3.5V 110ns
ISOPLUS247TM
G CE
Isolated Tab
G = Gate E = Emitter
C = Collector
Features
z Optimized for Low Switching Losses z Square RBSOA z Silicon Chip on Direct-Copper Bond
(DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Positive Thermal Coefficient of
Vce(sat) z Avalanche Rated z High Current Handling Capability
Advantages
z High P...
Similar Datasheet
- IXYR100N120C3 IGBT - IXYS